PD - 91720
IRF1010ES IRF1010EL
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Advanced Process Technology Surface Mount (IRF1010ES) Low-profile through-hole (IRF1010EL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated
G
HEXFET® Power
MOSFET
D
VDSS = 60V RDS(on) = 12mΩ
Description
Advanced HEXFET® Power
MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2Pak is a s...