F1016 datasheet

No.	Part #	Manufacturer	Description
1	SSF1016	Silikron Semiconductor Co	Power switching application ry voltage Operating Junction and Storage Temperature Range Max. 75 65 300 227 1.5 ±20 380 TBD 31 –55 to +150 W W/ ْC V mJ mJ v/ns ْC A Units Electrical Characteristics @TJ=25 ْC(unless otherwise specified) Parameter BVDSS VGS(th) IDSS Drain-to-Sour
2	F1016	Polyfet RF Devices	RF POWER VDMOS TRANSISTOR gold metal for greatly extended lifetime. Low output capacitance and high F t enhance broadband performance TM F1016 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 20 Watts Push - Pull Package Style AQ HIGH EFFICIENC
3	R5F1016AASP	Renesas	16-Bit Single-Chip Microcontrollers Ultra-low power consumption technology  VDD = single power supply voltage of 1.6 to 5.5 V  HALT mode  STOP mode  SNOOZE mode RL78 CPU core  CISC architecture with 3-stage pipeline  Minimum instruction execution time: Can be changed from high s
4	R5F1016CASP	Renesas	16-Bit Single-Chip Microcontrollers Ultra-low power consumption technology  VDD = single power supply voltage of 1.6 to 5.5 V  HALT mode  STOP mode  SNOOZE mode RL78 CPU core  CISC architecture with 3-stage pipeline  Minimum instruction execution time: Can be changed from high s
5	PTF10161	Ericsson	165 Watts/ 869-894 MHz GOLDMOS Field Effect Transistor MHz) Power Output at 1 dB Compression (VDD = 28 V, ICQ = 1.5 A Total, f = 880 MHz) Drain Efficiency (VDD = 28 V, POUT = 165 W, IDQ = 1.5 A Total, f = 894 MHz) Load Mismatch Tolerance (VDD = 28 V, POUT = 165 W, IDQ = 1.5 A Total, f = 893.9, 894 MHz—al
6	FPF1016	Fairchild Semiconductor	(FPF1015 - FPF1018) IntelliMAX 1V Rated Advanced Load Management Products 0.8 to 1.8V Input Voltage Range Typical RDS(ON) = 34mΩ @ VON - VIN = 2.0V Output Discharge Function Internal Pull down at ON Pin Accurate Slew Rate Controlled Turn-on time Low < 1µA Quiescent Current ESD Protected, above 8000V HBM, 2000
7	SSF1016A	Silikron	MOSFET and Benefits: D2PAK Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175℃ operating
8	SSF1016D	Silikron	MOSFET
9	K6F1016U4B	Samsung semiconductor	CMOS SRAM • Process Technology: Full CMOS • Organization: 64K x16 bit • Power Supply Voltage: 2.7~3.3V • Low Data Retention Voltage: 1.5V(Min) • Three state output status and TTL Compatible • Package Type: 48-FBGA-6.00x7.00 PRODUCT FAMILY Product Family Opera
10	PTF10160	Ericsson	85 Watts/ 860-960 MHz GOLDMOS Field Effect Transistor = 960 MHz) Drain Efficiency (VDD = 26 V, POUT = 85 W, IDQ = 700 mA, f = 960 MHz) Load Mismatch Tolerance (VDD = 26 V, POUT = 85 W, IDQ = 700 mA, f = 960 MHz —all phase angles at frequency of test) All published data at TCASE = 25°C unless otherwise
11	PTF10162	Ericsson	18 Watts/ 860-960 MHz GOLDMOS Field Effect Transistor 1 dB Compression (VDD = 26 V, IDQ = 130 mA, f = 960 MHz) Drain Efficiency (VDD = 26 V, POUT = 18 W, IDQ = 130 mA, f = 960 MHz) Load Mismatch Tolerance (VDD = 26 V, POUT = 18 W, IDQ = 130 mA, f = 960 MHz— all phase angles at frequency of test) All pu
12	R5F1016DASP	Renesas	16-Bit Single-Chip Microcontrollers Ultra-low power consumption technology  VDD = single power supply voltage of 1.6 to 5.5 V  HALT mode  STOP mode  SNOOZE mode RL78 CPU core  CISC architecture with 3-stage pipeline  Minimum instruction execution time: Can be changed from high s
13	R5F1016EASP	Renesas	16-Bit Single-Chip Microcontrollers Ultra-low power consumption technology  VDD = single power supply voltage of 1.6 to 5.5 V  HALT mode  STOP mode  SNOOZE mode RL78 CPU core  CISC architecture with 3-stage pipeline  Minimum instruction execution time: Can be changed from high s
14	SN74F1016	Texas Instruments	16-Bit Schottky Barrier Diode RC Bus-Termination Array a 16-bit R-C network and Schottky barrier diode array. These Schottky diodes provide clamp-to-ground functionality and serve to minimize overshoot and undershoot of high-speed switching buses. The SN74F1016 is characterized for operation from 0°C to
15	STF1016C	SamHop Microelectronics	N-Channel Enhancement Mode Field Effect Transistor Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. DFN 3.3 X 3.3 PIN 1 G S S S (Bottom view) DD D D D5 D6 D7 D8 4G 3S 2S 1S ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Symbol VDS VGS Parame