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F1016

Part Number	F1016
Manufacturer	Polyfet RF Devices
Description	RF POWER VDMOS TRANSISTOR
Published	Mar 30, 2005
Detailed Description	polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applic...
Datasheet	F1016 PDF File

Overview

polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.
Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
"Polyfet" process features gold metal for greatly extended lifetime.
Low output capacitance and high F t enhance broadband performance TM F1016 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 20 Watts Push - Pull Package Style AQ HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE ABSOLUTE MAXIMUM RATINGS (TC = 25 C) Total Device Dissipation 100 Watts Junction to Case Thermal Resistance 1.
75 o C/W Maximum Junction Temp...

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