Part Number
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F1081 |
Manufacturer
|
Polyfet RF Devices |
Description
|
RF POWER VDMOS TRANSISTOR |
Published
|
Mar 30, 2005 |
Detailed Description
|
polyfet rf devices
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applic...
|
Datasheet
|
F1081
|
Overview
polyfet rf devices
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.
Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
TM "Polyfet" process features gold metal for greatly extended lifetime.
Low output capacitance and high Ft enhance broadband performance
Total Device Dissipation 350 Watts Junction to Case Thermal Resistance 0.
5 o C/W Maximum Junction Temperature 200 o C Storage Temperature
F1081
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 200 Watts Gemini Package Style AR HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE
o
ABSOL...
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