FC6A21060L
Gate Resistor installed Dual N-Channel MOS FET
For lithium-ion secondary battery protection circuit
FC6A21060L
Unit: mm
Features y Low Source-source On-state Resistance:RSS(on)typ.
= 8.
7 mΩ(VGS = 4.
5 V) y CSP package:smallest & thinnest size y Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
Marking Symbol:31
Packaging FC6A21060L Embossed type (Thermo-compression sealing): 5 000 pcs / reel (standard)
Absolute Maximum Ratings Ta = 25 °C
Parameter Source-source
Voltage
FET1 Gate-source
Voltage FET2 Source Current (DC) *1
Source Current (Pulsed) *1,*2 Total Power Dissipation *1 Overall Channel Temperature
Storage Temperature Range
Symbol VSS VG...