FCA47N60 / FCA47N60_F109 — N-Channel SuperFET®
MOSFET
FCA47N60 / FCA47N60_F109
N-Channel SuperFET®
MOSFET
600 V, 47 A, 70 mΩ
September 2017
Features
• 650 V @ TJ = 150°C • Typ.
RDS(on) = 58 mΩ • Ultra Low Gate Charge (Typ.
Qg= 210 nC) • Low Effective Output Capacitance (Typ.
Coss(eff.
) = 420 pF) • 100% Avalanche Tested
Application
• Solar Invertor • AC-DC Power Supply
Description
SuperFET®
MOSFET is Fairchild Semiconductor’s first generation of high
voltage super-junction (SJ)
MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance.
This technology is tailored to minimize conduction loss, provide superior switching perf...