FCB11N60F 600V N-Channel
MOSFET
SuperFET
FCB11N60F
600V N-Channel
MOSFET
Features
• 650V @TJ = 150°C • Typ.
RDS(on) = 0.
32Ω • Fast Recovery Type ( trr = 120ns ) • Ultra low gate charge (typ.
Qg = 40nC) • Low effective output capacitance (typ.
Coss.
eff = 95pF) • 100% avalanche tested
May 2006 TM
tm
Description
SuperFETTM is, Farichild’s proprietary, new generation of high
voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.
This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy.
Co...