FCD850N80Z / FCU850N80Z — N-Channel SuperFET® II
MOSFET
October 2014
FCD850N80Z / FCU850N80Z
N-Channel SuperFET® II
MOSFET
800 V, 6 A, 850 m Features
• Typ.
RDS(on) = 710 mTyp.
) • Ultra Low Gate Charge (Typ.
Qg = 22 nC) • Low Eoss (Typ.
2.
3 uJ @ 400V) • Low Effective Output Capacitance (Typ.
Coss(eff.
) = 106 pF) • 100% Avalanche Tested • RoHS Compliant • ESD Improved Capability
Applications
Description
SuperFET® II
MOSFET is Fairchild Semiconductor’s brand-new high
voltage super-junction (SJ)
MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.
This technology is tailored to minimize conduction loss, provide su...