isc N-Channel
MOSFET Transistor
FCH043N60
·FEATURES ·With TO-247 packaging ·Drain Source
Voltage-
: VDSS ≥ 600V ·Static drain-source on-resistance:
RDS(on) ≤ 43mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Power supply ·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source
Voltage
600
V
VGSS
Gate-Source
Voltage
±20
V
ID
Drain Current-Continuous;@Tc=25℃
75
A
IDM
Drain Current-Single Pulsed
225
A
PD
Total Dissipation
592
W
Tj
Operating Junction Temperature
-55~150 ℃
Tstg
Storage Temperature
-55~150 ℃
·THERMAL CHARACTERISTICS
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