FCP110N65F — N-Channel SuperFET® II FRFET®
MOSFET
December 2014
FCP110N65F
N-Channel SuperFET® II FRFET®
MOSFET
650 V, 35 A, 110 mΩ
Features
• 700 V @ TJ = 150°C • Typ.
RDS(on) = 96 mΩ (Typ.
) • Ultra Low Gate Charge (Typ.
Qg = 98 nC) • Low Effective Output Capacitance (Typ.
Coss(eff.
) = 464 pF) • 100% Avalanche Tested • RoHS Compliant
Applications
• LCD / LED / PDP TV • Telecom / Server Power Supplies
• Solar Inverter
• AC - DC Power Supply
Description
SuperFET® II
MOSFET is Fairchild Semiconductor’s brand-new high
voltage super-junction (SJ)
MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.
This technology i...