isc N-Channel
MOSFET Transistor
FCP16N60N
·FEATURES ·With TO-220 packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Power supply ·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source
Voltage
600
V
VGSS
Gate-Source
Voltage
±30
V
ID
Drain Current-Continuous;@Tc=25℃
16
A
IDM
Drain Current-Single Pulsed
48
A
PD
Total Dissipation
134.
4
W
Tj
Operating Junction Temperature
-55~150 ℃
Tstg
Storage Temperature
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBO...