FCP170N60 — N-Channel SuperFET® II
MOSFET
September 2014
FCP170N60
N-Channel SuperFET® II
MOSFET
600 V, 22 A, 170 mΩ
Features
• 650 V @TJ = 150°C • Typ.
RDS(on) = 150 mΩ • Ultra Low Gate Charge (Typ.
Qg = 42 nC) • Low Effective Output Capacitance (Typ.
Coss(eff.
) = 190 pF) • 100% Avalanche Tested
• RoHS Compliant
Applications
• Telecom / Sever Power Supplies • Industrial Power Supplies • AC-DC Power Supply
Description
SuperFET® II
MOSFET is Fairchild Semiconductor’s brand-new high
voltage super-junction (SJ)
MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.
This advanced technology is tailored to minimize conduc...