FDA15N65 650V N-Channel
MOSFET
UniFET
FDA15N65
650V N-Channel
MOSFET Features
• 16A, 650V, RDS(on) = 0.
44Ω @VGS = 10 V • Low gate charge ( typical 48.
5 nC) • Low Crss ( typical 23.
6 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability
January 2007
TM
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficient switched mode power suppli...