FDC608PZ
June 2006
FDC608PZ
P-Channel 2.
5V Specified PowerTrench®
MOSFET
General Description
This P-Channel 2.
5V specified
MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
These devices are well suited for battery power applications: load switching and power management, battery power circuits, and DC/DC conversions.
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Features
• –5.
8 A, –20 V.
RDS(ON) = 30 mΩ @ VGS = –4.
5 V RDS(ON) = 43 mΩ @ VGS = –2.
5 V • Low Gate Charge • High performance trench technology for extremely low RDS(ON) • SuperSOT
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–6 package: small foo...