FDC610PZ P-Channel PowerTrench®
MOSFET
FDC610PZ
P-Channel PowerTrench®
MOSFET
–30V, –4.
9A, 42mΩ Features
General Description
August 2007
tm
Max rDS(on) = 42mΩ at VGS = –10V, ID = –4.
9A Max rDS(on) = 75mΩ at VGS = –4.
5V, ID = –3.
7A Low gate charge (17nC typical).
High performance trench technology for extremely low rDS(on).
SuperSOTTM –6 package: small footprint (72% smaller than
standard SO–8) low profile (1mm thick).
RoHS Compliant
This P-Channel
MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
These devi...