FDC640P
August 2000
FDC640P
P-Channel 2.
5V Specified PowerTrenchTM
MOSFET
General Description
This P-Channel 2.
5V specified
MOSFET is produced in a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process.
It has been optimized for power management applications for a wide range of gate drive
voltages.
Features •
-4.
5 A, -20 V.
RDS(ON) = 0.
050 Ω @ VGS = -4.
5 V RDS(ON) = 0.
077 Ω @ VGS = -2.
5 V
• • •
Rugged gate rating (±12V).
High performance trench technology for extremely low RDS(ON).
SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick).
Applications • Load switch • Battery protection • Power management
D D
S
1
6
2
5...