FDD4685 40V P-Channel PowerTrench®
MOSFET
March 2015
FDD4685 40V P-Channel PowerTrench®
MOSFET
–40V, –32A, 27mΩ
Features
General Description
Max rDS(on) = 27mΩ at VGS = –10V, ID = –8.
4A Max rDS(on) = 35mΩ at VGS = –4.
5V, ID = –7A High performance trench technology for extremely low rDS(on) RoHS Compliant
This P-Channel
MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to
deliver low rDS(on) and good switching characteristic offering superior performance in application.
Application
Inverter Power Supplies
G S
D
DT O- P-2A5K2 (T O -25 2)
S G
D
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDS VGS
ID
EAS PD TJ...