FDD6N50TM-F085 500V N-Channel
MOSFET
FDD6N50TM-F085
500V N-Channel
MOSFET
Features
• 6A, 500V, RDS(on) = 0.
9Ω @VGS = 10 V • Low gate charge ( typical 12.
8 nC) • Low Crss ( typical 9 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • Qualified to AEC Q101 • RoHS Compliant
D
Description
These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high effi...