FDFME3N311ZT Integrated N-Channel PowerTrench®
MOSFET and Schottky Diode
FDFME3N311ZT
July 2010
Integrated N-Channel PowerTrench®
MOSFET and Schottky Diode
30 V, 1.
8 A, 299 mΩ
Features
General Description
Max rDS(on) = 299 mΩ at VGS = 4.
5 V, ID = 1.
6 A Max rDS(on) = 410 mΩ at VGS = 2.
5 V, ID = 1.
3 A Low profile: 0.
55 mm maximum in the new package
MicroFET 1.
6x1.
6 Thin Free from halogenated compounds and antimony oxides HBM ESD protection level 1600 V (Note 3) RoHS Compliant
This device is designed specifically as a single package solution for a boost topology in cellular handset and other ultra-portable applications.
It features a
MOSFET with low input capacitance, total...