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MOSFET – Dual, N-Channel, POWERTRENCH)
20 V, 2.
1 A, 550 mW
FDG6317NZ
General Description This dual N−Channel
MOSFET has been designed specifically to
improve the overall efficiency of DC−DC converters using either synchronous or conventional switching PWM controllers.
It has been optimized use in small switching regulators, providing an extremely Iow RDS(ON) and gate charge (QG) in a small package.
Features
• 0.
7 A, 20 V
♦ RDS(ON) = 400 mW @ VGS = 4.
5 V ♦ RDS(ON) = 550 mW @ VGS = 2.
5 V
• Gate−Source Zener for ESD Ruggedness • Low Gate Charge • High Performance Trench Technology for Extremely Low RDS(ON) • Compact Industry Standard SC70−6 Surface Mount Package • Th...