FDI025N06 N-Channel PowerTrench®
MOSFET
June 2008
FDI025N06
N-Channel PowerTrench®
MOSFET
60V, 265A, 2.
5mΩ
tm
Features
• RDS(on) = 1.
9mΩ ( Typ.
) @ VGS = 10V, ID = 75A • Fast switching speed • Low gate charge • High performance trench technology for extremely low RDS(on) • High power and current handling capability • RoHS compliant
General Description
This N-Channel
MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Application
• DC to DC convertors / Synchronous Rectification
D
GDS
TO-262
FDI Series
G S
MOSFET Maximum Ratings TC = 25oC ...