FDJ1032C Complementary PowerTrench®
MOSFET
F
FDJ1032C Complementary PowerTrench®
MOSFET
June 2008
Features
■ Q1 –2.
8 A, –20 V.
■ Q2 3.
2 A, 20 V.
■ Low gate charge
RDS(ON) = 160 mΩ @ VGS = –4.
5 V RDS(ON) = 230 mΩ @ VGS = –2.
5 V RDS(ON) = 390 mΩ @ VGS = –1.
8 V
RDS(ON) = 90 mΩ @ VGS = 4.
5 V RDS(ON) = 130 mΩ @ VGS = 2.
5 V
■ High performance trench technology for extremely low RDS(ON)
■ FLMP SC75 package: Enhanced thermal performance in industry-standard package size
■ RoHS Compliant
General Description
These N & P-Channel
MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain su...