FDJ129P
July 2004
FDJ129P
P-Channel -2.
5 Vgs Specified PowerTrench
MOSFET
General Description
This P-Channel -2.
5V specified
MOSFET uses Fairchild’s advanced low
voltage PowerTrench process.
It has been optimized for battery power management applications.
Features
• –4.
2 A, –20 V.
RDS(ON) = 70 mΩ @ VGS = –4.
5 V RDS(ON) = 120 mΩ @ VGS = –2.
5 V • Low gate charge • High performance trench technology for extremely low RDS(ON) • Compact industry standard SC75-6 surface mount package
Applications
• Battery management • Load switch
S S
G
Bottom Drain
4 5
3 2 1
SC75-6 FLMP
S
S
S
6
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source
Voltage Gate-Source
Voltage Drain ...