MOSFET
FDMC612PZ P-Channel PowerTrench® MOSFET FDMC612PZ P-Channel PowerTrench® MOSFET -20 V, -14 A, 8.4 mΩ October 2013 Features General Description Max rDS(on) = 8.4 mΩ at VGS = -4.5 V, ID = -14 A Max rDS(on) = 13 mΩ at VGS = -2.5 V, ID = -11 A High performance trench technology for extremely low rDS(on) High power and current handling capability in ...
Fairchild Semiconductor