MOSFET – P-Channel, POWERTRENCH)
-20 V, -75 A, 4.
9 mW
FDMC6696P
General Description This P−Channel
MOSFET is produced using onsemi’s advanced
POWERTRENCH process that has been optimized for RDS(on), switching performance and ruggedness.
Features
• Max RDS(on) = 4.
9 mW at VGS = −4.
5 V, ID = −18 A • Max RDS(on) = 16.
4 mW at VGS = −1.
8 V, ID = −9 A • High Performance Trench Technology for Extremely Low RDS(on) • High Power and Current Handling Capability in a Widely Used
Surface Mount Package
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• Load Switch • Battery Management • Power Management • Reverse Polarity Protection
MAXIMUM RATINGS (TA = 25°C unless...