FDMC7692 N-Channel Power Trench®
MOSFET
July 2009
FDMC7692
30 V, 13.
3 A, 8.
5 m:
Features
Max rDS(on) = 8.
5 m: at VGS = 10 V, ID = 13.
3 A Max rDS(on) = 11.
5 m: at VGS = 4.
5 V, ID = 10.
6 A High performance technology for extremely low rDS(on) Termination is Lead-free and RoHS Compliant
N-Channel Power Trench®
MOSFET
General Description
This N-Channel
MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance.
This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
Application
DC - DC Buck Converters Noteboo...