FDMC8200 Dual N-Channel PowerTrench®
MOSFET
June 2009
FDMC8200
Dual N-Channel PowerTrench®
MOSFET
30 V, 9.
5 mΩ and 20 mΩ Features
Q1: N-Channel Max rDS(on) = 20 mΩ at VGS = 10 V, ID = 6 A Max rDS(on) = 32 mΩ at VGS = 4.
5 V, ID = 5 A Q2: N-Channel Max rDS(on) = 9.
5 mΩ at VGS = 10 V, ID = 9 A Max rDS(on) = 13.
5 mΩ at VGS = 4.
5 V, ID = 7 A RoHS Compliant
General Description
This device includes two specialized N-Channel
MOSFETs in a dual Power33 (3mm x 3mm MLP) package.
The switch node has been internally connected to enable easy placement and routing of synchronous buck converters.
designed to provide optimal power efficiency.
The control
MOSFET (Q1) and synchronous
MOSFET (Q2) ha...