FDMC8296 N-Channel Power Trench®
MOSFET
FDMC8296
N-Channel Power Trench®
MOSFET
30V, 18A, 8.
0m:
June 2014
Features
General Description
Max rDS(on) = 8.
0m: at VGS = 10V, ID = 12A Max rDS(on) = 13.
0m: at VGS = 4.
5V, ID = 10A High performance trench technology for extremely low rDS(on) Termination is Lead-free and RoHS Compliant
This N-Channel
MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance.
This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
Application
DC - DC Buck Converter
Notebook ba...