FDMC8462 N-Channel Power Trench®
MOSFET
March 2008
FDMC8462
N-Channel Power Trench®
MOSFET
40V, 20A, 5.
8mΩ
tm
Features
General Description
Max rDS(on) = 5.
8mΩ at VGS = 10V, ID = 13.
5A Max rDS(on) = 8.
0mΩ at VGS = 4.
5V, ID = 11.
8A Low Profile - 1mm max in Power 33 100% UIL Tested RoHS Compliant
This N-Channel
MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Application
DC - DC Conversion
S Pin 1 S S
G
D5 D6
4G 3S
D D D D
Top Bottom
Power 33
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol VDS VGS
ID
EAS ...