FDMC8622 N-Channel Power Trench®
MOSFET
September 2012
FDMC8622
N-Channel Power Trench®
MOSFET
100 V, 16 A, 56 m:
Features
Max rDS(on) = 56 m: at VGS = 10 V, ID = 4 A Max rDS(on) = 90 m: at VGS = 6 V, ID = 3 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used surface mount package 100% UIL Tested Termination is Lead-free and RoHS Compliant
General Description
This N-Channel
MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.
Application
DC-DC Primary Switch
D D
D
D
D D D
G
5 6 7 8
4 3 2 1
G S S...