FDMC8854 N-Channel PowerTrench®
MOSFET
February 2007
FDMC8854 N-Channel Power Trench®
MOSFET
30V, 15A, 5.
7mΩ Features General Description
Max rDS(on) = 5.
7mΩ at VGS = 10V, ID = 15A Max rDS(on) = 7.
6mΩ at VGS = 4.
5V, ID = 13A Low Profile - 1mm max in Power 33 RoHS Compliant
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This N-Channel
MOSFET is a rugged gate version of Fairchild Semiconductor‘s advanced Power Trench process.
It has been optimized for power management applications.
Application
DC - DC Conversion
Bottom
Top
5
6
7
8 D D D
D
5 6
4 3 2 1
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7
4 3 2 1 S S S G
8
Power 33
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol VDS VGS Parameter Drain to Source
Voltage Gate t...