FDMD84100 Dual N-Channel PowerTrench®
MOSFET
June 2016
FDMD84100
Dual N-Channel PowerTrench®
MOSFET
100 V, 21 A, 20 mΩ
Features
General Description
Max rDS(on) = 20 mΩ at VGS = 10 V, ID = 7 A Max rDS(on) = 32 mΩ at VGS = 6 V, ID = 5.
5 A Ideal for flexible layout in secondary side synchronous
rectification
This package integrates two N-Channel devices connected internally in common-source configuration.
This enables very low package parasitics and optimized thermal path to the common source pad on the bottom.
Provides a very small footprint (3.
3 x 5 mm) for higher power density.
Termination is Lead-free and RoHS Compliant 100% UIL tested
Applications
Isolated DC-DC Synchro...