FDME820NZT N-Channel PowerTrench®
MOSFET
October 2013
FDME820NZT
N-Channel PowerTrench®
MOSFET
20 V, 9 A, 18 mΩ
Features
Max rDS(on) = 18 mΩ at VGS = 4.
5 V, ID = 9 A Max rDS(on) = 24 mΩ at VGS = 2.
5 V, ID = 7.
5 A Max rDS(on) = 32 mΩ at VGS = 1.
8 V, ID = 7 A Low profile: 0.
55 mm maximum in the new package
MicroFET 1.
6x1.
6 Thin
Free from halogenated compounds and antimony oxides
HBM ESD protection level 2.
5 kV (Note3)
RoHS Compliant
General Description
This Single N-Channel
MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the rDS(ON) @ VGS = 1.
8 V on special MicroFET leadframe.
Applications
Li-lon Battery Pack Baseband Sw...