MOSFET – P-Channel POWERTRENCH)
-20 V, -8 A, 24 mW
FDME910PZT, FDME910PZT-P, FDME910PZT-P-Q
General Description This device is designed specifically for battery charging or load
switching in cellular handset and other ultraportable applications.
It features a
MOSFET with low on−state resistance and zener diode protection against ESD.
The MicroFETt 1.
6x1.
6 Thin package offers exceptional thermal performance for its physical size and is well suited to switching and linear mode applications.
Features
• Max RDS(on) = 24 mW at VGS = −4.
5 V, ID = −8 A • Max RDS(on) = 31 mW at VGS = −2.
5 V, ID = −7 A • Max RDS(on) = 45 mW at VGS = −1.
8 V, ID = −6 A • Low Profile: 0.
55 mm Maximum in the New Package...