FDMS3500 N-Channel Power Trench®
MOSFET
October 2014
FDMS3500
N-Channel Power Trench®
MOSFET
75V, 49A, 14.
5m:
tm
Features
General Description
Max rDS(on) = 14.
5m: at VGS = 10V, ID = 11.
5A Max rDS(on) = 16.
3m: at VGS = 4.
5V, ID = 10A Advanced Package and Silicon combination for low rDS(on) MSL1 robust package design
This N-Channel
MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
100% UIL Tested
Application
RoHS Compliant
DC - DC Conversion
Top Bottom Pin 1
S S S G
D D D D
Power 56
D5 D6 D7 D8
4G 3S 2S 1S
MOSFET Ma...