FDMS3624S PowerTrench® Power Stage
December 2011
FDMS3624S
PowerTrench® Power Stage
25V Asymmetric Dual N-Channel
MOSFET
Features
Q1: N-Channel Max rDS(on) = 5.
0 mΩ at VGS = 10 V, ID = 17.
5 A Max rDS(on) = 5.
7 mΩ at VGS = 4.
5 V, ID = 16 A
Q2: N-Channel Max rDS(on) = 1.
8 mΩ at VGS = 10 V, ID = 30 A Max rDS(on) = 2.
2 mΩ at VGS = 4.
5 V, ID = 27 A Low inductance packaging shortens rise/fall times, resulting in
lower switching losses
MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing
RoHS Compliant
General Description
This device includes two specialized N-Channel
MOSFETs in a dual PQFN package.
The switch node has been intern...