FDMS7580 N-Channel Power Trench®
MOSFET
October 2014
FDMS7580
N-Channel Power Trench®
MOSFET
25 V, 7.
5 mΩ
Features
General Description
Max rDS(on) = 7.
5 mΩ at VGS = 10 V, ID = 15 A Max rDS(on) = 11.
1 mΩ at VGS = 4.
5 V, ID = 12 A Advanced Package and Silicon combination for low rDS(on)
and high efficiency
Next generation enhanced body diode technology, engineered for soft recovery
MSL1 robust package design
This N-Channel
MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.
It has been optimized for low gate charge, low rDS(on), fast s...