FDMS86101 N-Channel PowerTrench®
MOSFET
October 2012
FDMS86101
N-Channel PowerTrench®
MOSFET
100 V, 60 A, 8 mΩ Features General Description
This N-Channel
MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A Max rDS(on) = 13.
5 mΩ at VGS = 6 V, ID = 9.
5 A Advanced Package and Silicon combination for low rDS(on) and high efficiency MSL1 robust package design 100% UIL tested 100% Rg tested RoHS Compliant
Application
DC-DC Conversion
Top
Bottom S Pin 1 S S S G S S D D D G D D D D
D
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