FDMS86181 N-Channel Shielded Gate PowerTrench®
MOSFET
FDMS86181
December 2015
N-Channel Shielded Gate PowerTrench®
MOSFET
100 V, 124 A, 4.
2 mΩ
Features
Shielded Gate
MOSFET Technology Max rDS(on) = 4.
2 mΩ at VGS = 10 V, ID = 44 A Max rDS(on) = 12 mΩ at VGS = 6 V, ID = 22 A ADD 50% lower Qrr than other
MOSFET suppliers Lowers switching noise/EMI MSL1 robust package design 100% UIL tested RoHS Compliant
General Description
This N-Channel MV
MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology.
This process has been optimized to minimise on-state resistance and yet maintain superior switching performan...