FDMS86500DC N-Channel Dual CoolTM Power Trench®
MOSFET
November 2012
FDMS86500DC
N-Channel Dual CoolTM Power Trench®
MOSFET
60 V, 108 A, 2.
3 mΩ
Features
Dual CoolTM Top Side Cooling PQFN package Max rDS(on) = 2.
3 mΩ at VGS = 10 V, ID = 29 A Max rDS(on) = 3.
3 mΩ at VGS = 8 V, ID = 24 A High performance technology for extremely low rDS(on) 100% UIL Tested RoHS Compliant
General Description
This N-Channel
MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process.
Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambi...