FDMS86550 N-Channel PowerTrench®
MOSFET
March 2015
FDMS86550
N-Channel PowerTrench®
MOSFET
60 V, 234 A, 1.
65 mΩ
Features
General Description
Max rDS(on) = 1.
65 mΩ at VGS = 10 V, ID = 32 A
Max rDS(on) = 2.
2 mΩ at VGS = 8 V, ID = 27 A
Advanced Package and Silicon combination for low rDS(on) and high efficiency
This N-Channel
MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
MSL1 robust package design 100% UIL tested RoHS Compliant
Applications
Primary DC-DC
MOSFET Secondary Synchronous Rectifier
Load Switch
Top Pin 1
...