FDMS8670 N-Channel Power Trench®
MOSFET
May 2009
FDMS8670
N-Channel Power Trench®
MOSFET
30V, 42A, 2.
6m:
tm
Features
General Description
Max rDS(on) = 2.
6m: at VGS = 10V, ID = 24A Max rDS(on) = 3.
8m: at VGS = 4.
5V, ID = 18A 100% UIL Tested RoHS Compliant
This N-Channel
MOSFET is produced using Fairchild Semiconductor's latest proprietary Power Trench® process that
has been especially tailored to minimize on-resistance.
This part
exhibits industry leading switching FOM (RDS*Qgd) to enhance
DC-DC synchronous rectifier efficiency.
Application
DC - DC Conversion
Top Bottom Pin 1
S S S G
D D D D
Power 56
D5 D6 D7 D8
4G 3S 2S 1S
MOSFET Maximum Ratings TA = 25°C unless otherw...