FDMS9600S Dual N-Channel PowerTrench®
MOSFET
FDMS9600S
Dual N-Channel PowerTrench®
MOSFET
Q1: 30V, 32A, 8.
5m: Q2: 30V, 30A, 5.
5m:
May 2014
Features
General Description
Q1: N-Channel Max rDS(on) = 8.
5m: at VGS = 10V, ID = 12A Max rDS(on) = 12.
4m: at VGS = 4.
5V, ID = 10A Q2: N-Channel Max rDS(on) = 5.
5m: at VGS = 10V, ID = 16A Max rDS(on) = 7.
0m: at VGS = 4.
5V, ID = 14A Low Qg high side
MOSFET
Low rDS(on) low side
MOSFET Thermally efficient dual Power 56 package
This device includes two specialized
MOSFETs in a unique dual Power 56 package.
It is designed to provide an optimal Synchronous Buck power stage in terms of efficiency and PCB utilization.
The low switching loss "H...