MOSFET – P-Channel 1.
8 V Specified POWERTRENCH)
FDN304P
General Description This P−Channel 1.
8 V specified
MOSFET uses onsemi’s advanced
low
voltage POWERTRENCH process.
It has been optimized for battery power management applications.
Features
• −2.
4 A, −20 V
♦ RDS(ON) = 52 mW @ VGS = −4.
5 V ♦ RDS(ON) = 70 mW @ VGS = −2.
5 V ♦ RDS(ON) = 100 mW @ VGS = −1.
8 V
• Fast Switching Speed • High Performance Trench Technology for Extremely Low RDS(ON) • SUPERSOTt−23 provides Low RDS(ON) and 30% Higher Power
Handling Capability than SOT23 in the same Footprint
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• Battery Management • Load Switch • Battery Protection
...