FDN306P
December 2001
FDN306P
P-Channel 1.
8V Specified PowerTrench
MOSFET
General Description
This P-Channel 1.
8V specified
MOSFET uses Fairchild’s advanced low
voltage PowerTrench process.
It has been optimized for battery power management applications.
Features
• –2.
6 A, –12 V.
RDS(ON) = 40 mΩ @ VGS = –4.
5 V RDS(ON) = 50 mΩ @ VGS = –2.
5 V RDS(ON) = 80 mΩ @ VGS = –1.
8 V
Applications
• Battery management • Load switch • Battery protection
• Fast switching speed • High performance trench technology for extremely low RDS(ON) • SuperSOTTM -3 provides low RDS(ON) and 30% higher power handling capability than SOT23 in the same footprint
D
D
S
SuperSOT -3
TM
G
TA=25oC unless otherwise no...