MOSFET – N-Channel, POWERTRENCH)
150 V, 1.
6 A, 261 mW
FDN86246
General Description This N−Channel
MOSFET is produced using onsemi’s advanced
POWERTRENCH process that has been optimized for rDS(on), switching performance and ruggedness.
Features
• Max rDS(on) = 261 mW at VGS = 10 V, ID = 1.
6 A • Max rDS(on) = 359 mW at VGS = 6 V, ID = 1.
4 A • High Performance Trench Technology for Extremely Low rDS(on) • High Power and Current Handling Capability in a Widely Used
Surface Mount Package
• Fast Switching Speed • 100% UIL Tested • Pb−Free, Halide Free and RoHS Compliant
Application
• PD Switch
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted.
)
Symbol
Parameter
Value
Unit
VDS
Dra...