MOSFET – N-Channel, Shielded Gate, POWERTRENCH)
60 V, 2.
6 A, 116 mW
FDN86501LZ
General Description This N−Channel
MOSFET is produced using onsemi’s advanced
POWERTRENCH process that incorporates Shielded Gate technology.
This process has been optimized for rDS(on), switching performance and ruggedness.
Features
• Shielded Gate
MOSFET Technology • Max rDS(on) = 116 mW at VGS = 10 V, ID = 2.
6 A • Max rDS(on) = 173 mW at VGS = 4.
5 V, ID = 2.
1 A • High Performance Trench Technology for Extremely Low rDS(on) • High Power and Current Handling Capability in a Widely Used
Surface Mount Package
• Fast Switching Speed • 100% UIL Tested • This Device is Pb−Free, Halide Free and is RoHS Compliant
Applic...