FDP025N06 — N-Channel PowerTrench®
MOSFET
FDP025N06
N-Channel PowerTrench®
MOSFET
60 V, 265 A, 2.
5 mΩ
November 2013
Features
• RDS(on) = 1.
9 mΩ (Typ.
) @ VGS = 10 V, ID = 75 A • Fast Switching Speed • Low Gate Charge • High Performance Trench Technology for Extremely Low
RDS(on) • High Power and Current Handling Capability • RoHS Compliant
Description
This N-Channel
MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Applications
• Synchronous Rectification for ATX / Server / Telecom PSU • Battery Protection Circuit • Motor Drives and Uninterruptible Po...