FDP027N08B — N-Channel PowerTrench®
MOSFET
FDP027N08B
N-Channel PowerTrench®
MOSFET
80 V, 223 A, 2.
7 mΩ
Features
• RDS(on) = 2.
21 mΩ ( Typ.
) @ VGS = 10 V, ID = 100 A • Low FOM RDS(on) * QG • Low Reverse-Recovery Charge, Qrr = 112 nC • Soft Reverse-Recovery Body Diode • Enables High Efficiency in Synchronous Rectification • Fast Switching Speed • 100% UIL Tested • This device is Pb-Free, Halogen Free/BFR Free and
is RoHS Compliant
Description
This N-Channel
MOSFET is produced using ON Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Applications
• Synchronous Rectification for ATX / Server / Te...