FDP030N06B_F102 — N-Channel PowerTrench®
MOSFET
FDP030N06B_F102
N-Channel PowerTrench®
MOSFET
60 V, 195 A, 3.
1 mΩ
November 2013
Features
• RDS(on) = 2.
67 mΩ (Typ.
) @ VGS = 10 V, ID = 100 A • Low FOM RDS(on) * QG • Low Reverse-Recovery Charge, Qrr = 78 nC • Soft Reverse-Recovery Body Diode • Enables High Efficiency in Synchronous Rectification • Fast Switching Speed • 100% UIL Tested • RoHS Compliant
Description
This N-Channel
MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Applications
• Synchronous Rectification for ATX / Server / Telecom PSU • Ba...